unisonic technologies co., ltd 25n10 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r502-448.a n-channel enhancement mode power mosfet ? description the utc 25n10 is an n-channel enhancement mode power mosfet and it uses utc?s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. it is generally suitable for all commercial-industrial applications and dc/dc converters requiring low voltage. ? features * single drive requirement * low gate charge * rohs compliant ? symbol ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing 25n10l-tn3-r 25N10G-TN3-R to-252 g d s tape reel
25n10 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-448.a ? absolute maximum ratings parameter symbol ratings unit drain source voltage v dss 100 v gate source voltage v gss 20 v t c =25c i d 23 a continuous drain current (v gs =10v ) t c = 100c i d 14.6 a pulsed drain current (note 2) i dm 80 a total power dissipation ( t c =25c ) p d 41 w operating junction temperature t j -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by max. junction temperature ? thermal data parameter symbol ratings unit junction to ambient ja 100 c/w junction to case jc 3 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =1ma 100 v breakdown voltage temperature coefficient bv dss / t j reference to 25c , i d =1ma 0.14 v/c v ds =100v, v gs =0v, t j =25c 25 a drain-source leakage current i dss v ds =80v, v gs =0v,t j =150c 100 a gate-source leakage current i gss v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2 4 v static drain-source on-resistance (note) r ds(on) v gs =10v, i d =16a 80 m ? forward transconductance g fs v ds =10v, i d =16a 14 s dynamic parameters input capacitance c iss 1060 1700 pf output capacitance c oss 270 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 8 pf gate resistance r g f=1.0mhz 1.5 2.3 ? switching parameters total gate charge (note) q g 19 30 nc gate source charge q gs 5 nc gate drain charge q gd v gs =10v, v ds =80v, i d =16a 6 nc turn-on delay time 1 t d(on) 10 ns turn-on rise time t r 28 ns turn-off delay time t d(off) 17 ns turn-off fall-time t f v dd =50v, i d =16a, r g =3.3 ? , v gs =10v, r d =3.125 ? 2 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =16a, v gs =0v 1.3 v reverse recovery time t rr 90 ns reverse recovery charge q rr i s =16a,v gs =0v, di/dt=100a/s 380 nc note: pulse test : pulse width 300 s, duty cycle 2%
25n10 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-448.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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